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ISC provides a wide variety of BJTs, including NPN, PNP, Darlington, with voltages ranging from 20V to 1600V, currents from 0.1A to 60A. We also provide metallic packaging TO-3 series products. ISC’s products have robust performance with minimal lot-to-lot variations.

ISC’s new products, high-frequency high-speed low-saturation voltage transistors in TO-251, TO-252, and TO-263 packages, are unique in Chinese production, and can reach frequencies above 300MHz, and tf  <100ns.

 


ISC provides MOSFETs under U.S., European, and Japanese categories, with robust performance and minimal lot-to-lot variations. We also produce metallic packaging TO-3 MOSFETs.

Maximum Current 180A, Highest Voltage 900V.



ISC provides thyristors under European and Japanese categories. We have a wide variety of packages. Maximum Current 80A, Highest Voltage 1200V.


Our RF transistors are low-noise, high-gain, with fT reaching 10GHz. We provide surface mounting small signal series and TO-220 power series.


We provide many series with different barrier heights, optimizing between VF and IR. We offer products with 20-300V, and 5-60A. We also produce low VF series. At the same time, we guarantee outstanding performance under high temperature.


We use multilayer epitaxial process to optimize voltage, current, and switching speed. We have products with 200-1500V and maximum current 80A. We provide TO-220, TO-200F, TO-3P, TO-263, and TO-252 packages.


We offer 78xx and 79xx series, with 1.5A and 1.0A. Packages include TO-220, TO-263, TO-251, TO252, and especially TO-3 metallic, such as 7805K and LM 317K. These products have robust performance with minimal lot-to-lot variations.   


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Address: 68 Xinmei Road, WND, Wuxi, Jiangsu, China (214028)
Toll Free Sales: 800-828-7177     Tel: 0510-85346300     FAX: 0510-85346280     Email: mdd@iscsemi.com     mdh@iscsemi.com
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