RF Power Transistor's Case
We ISC specifically developed and produced series cases for RF Power Transistors,
We have stock for case ISC-RFC18H and it can replace case NI-1230-4LS2L of Freescale Semiconductor, this case can be used for RF Power LDMOS Transistors AFT18H356-24S, which is applied for mobile communication base station transmitter.
We can customize RF power transistor cases according to customer’s requirements, the spec range we can provide:
Operation Frequency: 30MHz - 3GHz,
Output Power: 10W-1000W.
The lead time for the 1st batch of customized products is three months, and it only requires one month for follow-on orders.
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Address: 68 Xinmei Road, WND, Wuxi, Jiangsu, China (214028)
Tel: 0510-85346350 Email: mdh@iscsemi.com mdd@iscsemi.com
Links: ChipFind ALLDatasheet IC2China
Address: 68 Xinmei Road, WND, Wuxi, Jiangsu, China (214028)
Tel: 0510-85346350 Email: mdh@iscsemi.com mdd@iscsemi.com
Links: ChipFind ALLDatasheet IC2China